Document
Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
s Features
q High foward current transfer ratio hFE q High-speed switching q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with
one screw.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–400 –400 –7 –1.2 – 0.6 25
2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25
5.08±0.5 123
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current Emitter cutoff current
ICBO VCB = –400V, IE = 0 IEBO VEB = –7V, IC = 0
–100 –100
µA µA
Collector to emitter voltage Forward current transfer ratio
VCEO hFE1* hFE2
IC = –10mA, IB = 0 VCE = –5V, IC = –100mA VCE = –5V, IC = –300mA
–400 30 10
V 160
Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat)
IC = –300mA, IB = –60mA IC = –300mA, IB = –60mA
–1.0 V –1.2 V
Transition frequency Turn-on time Storage time Fall time
fT VCE = –10V, IC = –100mA, f = 1MHz ton IC = –300mA, tstg IB1 = –60mA, IB2 = 60mA, tf VCC = –100V
15 MHz 1.0 µs 3.5 µs 1.0 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 30 to 60 50 to 100
O 80 to 160
1
Power Transistors
Collector power dissipation PC (W)
PC — Ta
40
35
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
30 (3) Without heat sink (PC=2.0W)
25
20 (1)
15
10 (2)
5
(3) 0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Collector current IC (A)
– 0.8 – 0.7 – 0.6
IC — VCE
TC=25˚C IB=–40mA
– 0.5 – 0.4
–10mA –8mA –6mA
– 0.3 – 0.2 – 0.1
–4mA –2mA
–1mA
0 0 –1 –2 –3 –4 –5 –6 –7 –8
Collector to emitter voltage VCE (V)
Collector to emitter saturation voltage VCE(sat) (V)
2SA1499
–100 –30 –10
VCE(sat) — IC
IC/IB=5
–3 –1 – 0.3 – 0.1
TC=100˚C 25˚C –25˚C
– 0.03
– 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Base to emitter saturation voltage VBE(sat) (V)
–3 –1 – 0.3 – 0.1
VBE(sat) — IC
IC/IB=5
TC=–25˚C 100˚C
25˚C
– 0.03
– 0.01 – 0.01 – 0.03
– 0.1
– 0.3
Collector current IC (A)
–1
Forward current transfer ratio hFE
10000 3000 1000
hFE — IC
VCE=–5V
300 TC=100˚C 25˚C
100 –25˚C
30
10
3
1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
Collector current IC (A)
–1
Transition frequency fT (MHz)
1000 300 100
fT — IC
VCE=–10V f=1MHz TC=25˚C
30 10
3 1
0.3
0.1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
Collector current IC (A)
–1
Switching time ton,tstg,tf (µs)
ton, tstg, tf — IC
100 Pulsed tw=1ms Duty cycle=1%
30 IC/IB=5(–IB1=IB2) VCC=–100V
10 TC=25˚C
tstg 3
1
tf 0.3
ton
0.1
0.03
0.01 0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
–10
–3 ICP
–1 IC
– 0.3
– 0.1
Non repetitive pulse TC=25˚C
t=1ms 1s 10ms
– 0.03 – 0.01
– 0.003
– 0.001 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2
Power Transistors
103 102 10
Rth(t) — t
(1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
Thermal resistance Rth(t) (˚C/W)
1
10–1
10–2 10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SA1499
3
.