JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAT64-04, BAT64-05, BAT64-06
SCHOT...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAT64-04, BAT64-05, BAT64-06
SCHOTTKY BARRIER DIODE FEATURES z For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications z Integrated diffused guard ring z Low forward voltage
SOT-23
1
BAT64-06 MARKING:66S BAT64-05 MARKING:65S
BAT64-04 MARKING: 64S
BAT64-06
BAT64-05
BAT64-04
Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak reverse voltage DC reverse
Non-repetitive Peak forward surge current @t=8.3ms Forward current
Power Dissipation
Thermal Resistance Junction−to−Ambient
Junction temperature
Storage temperature
Electrical Ratings @Ta=25℃
Parameter
Symbol Min.
Reverse breakdown voltage
VR 40
Forward voltage
VF
Reverse current Capacitance between terminals
IR CT
Symbol VRM VR IFSM IF PD RΘJA Tj Tstg
Typ. Max.
350 430 520 750
2
6
Limits
40
0.8 0.25 250 400 125 -55~+150
Unit
V
A A mW ℃/W ℃ ℃
Unit V
mV
μA pF
Test Conditions
IR=10μA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V
VR=1V,f=1MHz
www.cj-elec.com
1
(,2FW,201
Typical Characteristics
FORWARD CURRENT IF (mA)
Forward Characteristics
800
100
Ta=100℃ Ta=25℃
10
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE VF (V)
Capacitance Characteristics
20
Ta=25℃ f=1MHz
15
10
5
0 0 8 16 24 32 40
REVERSE VOLTAGE VR (V)
POWER DISSIPATION PD (mW)
REVERSE CURRENT IR (uA)
Reverse Characteristics
1000
100 Ta=100℃
10
Ta=25℃
1
0.1 0
300 250 2...
