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BAS70WS

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAS70WS SCHOTTKY BARRIER DIODE S...


JCET

BAS70WS

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAS70WS SCHOTTKY BARRIER DIODE SOD-323 FEATURES z Low Turn-on Voltage z Fast Switching z PN Junction Guard for Transient and ESD Protection z Designed for Surface Mount Application z Plastic Material –UL Recognition Flammability Classification 94V-O MARKING: K73 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 Parameter Symbol Limit Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking V oltage Forward Continuous Current 1RQUHSHWLWLYHPeak Forward Surge Current #W PV Power Dissipation VRRM VRWM VR IF IFSM PD 70 70 100 200 Thermal Resistance from Junction to Ambient RθJA 500 Junction temperature Storage Temperature TJ TSTG 125 -55 ~+150 Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR CT Min Typ Max Unit 0.41 V 1V 100 nA 2 pF Reverse recovery time trr 5 ns Unit V mA mA mW ℃/W ℃ ℃ Conditions IF=1mA IF=15mA VR=50V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 F,Mar,2015 Typical Characteristics 20 Pulsed 10 Forward Characteristics T a =25℃ =100℃ T a FORWARD CURRENT I (mA) F 3 1 0.3 0.1 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 REVERSE CURRENT I (uA) R 100 Pulsed 10 1 Reverse Characteristics T =100℃ a 0.1 T =25℃ a...




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