JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W SCHOTTKY BARRIER DI...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W
SCHOTTKY BARRIER DIODE
FEATURES For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
SOD-123
MARKING: B5817W:SJ
B5818W:SK
B5819W:SL
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol B5817W
B5818W
Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current Non-repetitive Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current
Power Dissipation Thermal Resistance Junction to Ambient Junction temperature
Storage Temperature
VRM VRRM VRWM
VR VR(RMS)
IO IFSM IFRM PD
RθJA
TJ TSTG
20 20 14
30
30
21 1 9 1.5 500 200 125 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
B5819W
40 40 28
Unit V
V
V A A A mW ℃/W ℃ ℃
Parameter Reverse breakdown voltage Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol V(BR) IR
VF
CD
Test conditions
IR= 1mA
B5817W
B5818W
B5819W
VR=20V VR=30V VR=40V
B5817W B5818W B5819W
B5817W IF=1A
IF=3A
B5818W IF=1A
IF=3A
B5819W IF=1A
IF=3A
VR=4V, f=1MHz
Min
20 30 40
Max Unit V
1
0.45 0.75 0.55 0.875 0.6 0.9
120
mA
V V V
pF
www.cj-elec.com
1
D,Mar,2015
Typical Characteristics
...