PEMH13

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH13 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Preliminary specification 2001 Dec 13 Philips Semiconductors NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Preliminary specification PEMH13 FEATURES 300 mW total power dissipation Very small 1.6 × 1.2 mm ultra thin package Improved thermal behaviour due to flat leads Self alignment during soldering due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduces required PCB area Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package. MARKING TYPE NUMBER PEMH13 MARKING CODE 21 QUICK REFERENCE DATA SYMBOL PARAMETER VCEO ICM TR1 collector-emitter voltage peak collector current NPN TR2 NPN R1 bias resistor R2 bias resistor MAX. UNIT 50 V 100 mA −− −− 4.7 kΩ 47 kΩ PINNING PIN 1, 4 emitter 2, 5 base 6, 3 collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 handbook, half6page 5 4 654 R1 R2 TR2 TR1 R2 R1 123 123 Top view MHC049 Fig.1 Simplified outline (SOT666) and symbol. 2, 5 6, 3 MBK120 1, 4 Fig.2 Equivalent inverter symbol. 2001 Dec 13 2 Philips Semiconductors NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITION...