DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH13 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Prelimina...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH13
NPN resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Preliminary specification
2001 Dec 13
Philips Semiconductors
NPN resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Preliminary specification
PEMH13
FEATURES
300 mW total power dissipation Very small 1.6 × 1.2 mm ultra thin package Improved thermal behaviour due to flat leads Self alignment during soldering due to straight leads Replaces two SC-75/SC-89 packaged
transistors on
same PCB area Reduces required PCB area Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification Inverter and interface circuits Circuit driver.
DESCRIPTION
NPN resistor-equipped
transistors in a SOT666 plastic package.
MARKING
TYPE NUMBER PEMH13
MARKING CODE 21
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO ICM TR1
collector-emitter voltage peak collector current
NPN
TR2
NPN
R1 bias resistor
R2 bias resistor
MAX. UNIT
50 V 100 mA −− −− 4.7 kΩ 47 kΩ
PINNING
PIN 1, 4 emitter 2, 5 base 6, 3 collector
DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
handbook, half6page 5
4
654
R1 R2 TR2
TR1 R2 R1
123
123
Top view
MHC049
Fig.1 Simplified outline (SOT666) and symbol.
2, 5 6, 3
MBK120
1, 4
Fig.2 Equivalent inverter symbol.
2001 Dec 13
2
Philips Semiconductors
NPN resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITION...