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AUIRFN8405 Dataheets PDF



Part Number AUIRFN8405
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet AUIRFN8405 DatasheetAUIRFN8405 Datasheet (PDF)

  AUTOMOTIVE GRADE AUIRFN8405 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatin.

  AUIRFN8405   AUIRFN8405



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  AUTOMOTIVE GRADE AUIRFN8405 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Applications  Electric Power Steering (EPS)  Battery Switch  Start/Stop Micro Hybrid  Heavy Loads  DC-DC Converter VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) G Gate HEXFET® POWER MOSFET 40V 1.6m 2.0m 187A 95A   D Drain PQFN 5X6 mm S Source Base Part Number   AUIRFN8405 Package Type   PQFN 5mm x 6mm Standard Pack Form Tape and Reel Quantity 4000 Orderable Part Number   AUIRFN8405TR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 187 132 95 670 3.3 136 0.022 ± 20 -55 to + 175 Units A W W/°C V °C   Avalanche Characteristics EAS(Thermally Limited) EAS (Tested) IAR EAR Single Pulse Avalanche Energy  Single Pulse Avalanche Energy Avalanche Current  Repetitive Avalanche Energy 190 365 See Fig. 14, 15, 22a, 22b mJ A mJ HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 3, 2014   AUIRFN8405 Thermal Resistance Symbol RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case  Junction-to-Case  Junction-to-Ambient  Junction-to-Ambient  Parameter Typ. ––– ––– ––– ––– Max. 1.1 30 44 28 Units °C/W Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol.


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