Document
AUTOMOTIVE GRADE
AUIRFN8405
Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Applications Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Converter
VDSS RDS(on) typ.
max ID (Silicon Limited) ID (Package Limited)
G Gate
HEXFET® POWER MOSFET
40V 1.6m 2.0m 187A
95A
D Drain
PQFN 5X6 mm
S Source
Base Part Number AUIRFN8405
Package Type PQFN 5mm x 6mm
Standard Pack
Form Tape and Reel
Quantity 4000
Orderable Part Number AUIRFN8405TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. 187 132
95 670
3.3 136 0.022 ± 20 -55 to + 175
Units
A
W W/°C
V °C
Avalanche Characteristics
EAS(Thermally Limited)
EAS (Tested) IAR EAR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
190 365
See Fig. 14, 15, 22a, 22b
mJ
A mJ
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
November 3, 2014
AUIRFN8405
Thermal Resistance
Symbol
RJC (Bottom) RJC (Top) RJA RJA (<10s)
Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient
Parameter
Typ. ––– ––– ––– –––
Max. 1.1 30 44 28
Units °C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol.