N-CHANNEL POWER MOSFET
9N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N50 is an N-ch...
Description
9N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 9N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON)=0.85Ω @ VGS=10V * High Switching Speed * Improved dv/dt Capability * 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N50L-TF3-T
9N50G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F
Pin Assignment 123 GDS
Packing Tube
www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-522.b
9N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
500 V ±30 V
Drain Current
Continuous (TC=25°C) Pulsed (Note 2)
Avalanche Current (Note 2)
ID IDM IAR
9 (Note 5) 36 (Note 5)
9
A A A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 4)
Peak Diode Recovery dv/dt (Note 4)
EAS EAR dv/dt
360 mJ 13.5 mJ 4.5 V/ns
Power Dissipation ...
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