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9N50 Dataheets PDF



Part Number 9N50
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 9N50 Datasheet9N50 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N50 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 500 ±20 9 V V A ID(puls) Pulse Drain Current 36 A Ptot Total Dissipation@TC=25℃ 44 W .

  9N50   9N50


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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N50 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 500 ±20 9 V V A ID(puls) Pulse Drain Current 36 A Ptot Total Dissipation@TC=25℃ 44 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 9N50 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS=9A ;VGS= 0 VGS= 10V; ID=4.5A VGS= ±20V;VDS= 0 VDS= 500V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz VGS=10V; ID=9A; VDD=250V; RL=25Ω MIN TYPE MAX UNIT 500 V 2.0 4.0 V 1.4 V 0.85 Ω ±100 nA 1 µA 790 24 pF 130 140 45 ns 125 195 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


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