P-Channel 30-V MOSFET
ACE7331M
P-Channel 30-V MOSFET
Description The ACE7331M utilize a high cell density trench process to provide low rDS(on...
Description
ACE7331M
P-Channel 30-V MOSFET
Description The ACE7331M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper lead frame DFN3x3-8L saves board space Fast switching speed High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b
TA=25℃ TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃ TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS -30 V
VGS ±20 V
-13.4
ID
-11.0
A
IDM ±50 A
IS -2.1 A
3.5
PD
W 2.0
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec Steady State
RθJA
Maximum 35 81
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
VER 1.1 1
Packaging Type DFN3*3-8L
ACE7331M
P-Channel 30-V MOSFET
Ordering information ACE7331M NN + H Halogen - free Pb - free NN : DFN3*3-8L
VER 1.1 2
ACE7331M
P-Channel 30-V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold Voltag...
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