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3DD5032P Dataheets PDF



Part Number 3DD5032P
Manufacturers JILIN SINO
Logo JILIN SINO
Description CASE-RATED BIPOLAR TRANSISTOR
Datasheet 3DD5032P Datasheet3DD5032P Datasheet (PDF)

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032P FOR LOW FREQUENCY R 3DD5032P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 1 μs(max) ● APPLICATIONS ● Horizontal deflection output for color TV. 1 23 FEATURES ●3DD5032PNPN ● 3DD5032P is high breakdown , : 、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc., adoption of (RoHS)。 fully plastic packge. RoHS product. .

  3DD5032P   3DD5032P


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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032P FOR LOW FREQUENCY R 3DD5032P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 1 μs(max) ● APPLICATIONS ● Horizontal deflection output for color TV. 1 23 FEATURES ●3DD5032PNPN ● 3DD5032P is high breakdown , : 、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc., adoption of (RoHS)。 fully plastic packge. RoHS product. EQUIVALENT CIRCUIT ORDER MESSAGE Order codes 3DD5032P-O-A-N-D Marking D5032 Halogen Free NO Package TO-3P(H)IS Packaging Foam :201412A 1/5 R ABSOLUTE RATINGS (Tc=25℃) Parameter — Collector−Base Voltage Symbol BVCBO — Collector−Emitter Voltage BVCEO — Emitter−Base Voltage Collector Current Base Current DC Pulse BVEBO IC ICP IB Collector Power Dissipation PC Max. Junction Temperature Tj Storage Temperature Range TSTG 3DD5032P Value 1500 Unit V 600 V 6V 8 16 A 4A 50 W 150 -55~+150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tc=25℃) Parameter V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sat) tf ts ft Tests conditions IC=1mA,IE=0 IE=400mA,IC=0 VCB=1500V, IE=0 VEB=4V, IC=0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC=4.5A, IB=0.9A IC=4.5A, IB=0.9A IC=4A,2IB1=-IB2=1.8A fH=15.75kHz VCE=10V, IC=0.1A Min 1500 6 40 10 5 1.7 Max 1 150 30 3 1.5 1 9 Unit V V mA µA V V µs µs MHz :201412A 2/5 R 3DD5032P . ELECTRICAL CHARACTERISTICS (curves) HFE – IC VCE(sat)- IC VBE(sat)- IC PC-TC SOA CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE Tc=25℃ DC :201412A 3/5 R PACKAGE MECHANICAL DATA TO-3P(H)IS 3DD5032P Unit :mm :201412A 4/5 R 1. ,, 。 2., 。 3. ,。 4. 3DD5032P NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don’t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. :99 :132013 :86-432-64678411 :86-432-64665812 :www.hwdz.com.cn ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel:86-432-64678411 Fax:86-432-64665812 Web Site:www.hwdz.com.cn :99 :132013 :86-432-64675588 64675688 64678411 : 86-432-64671533 MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411 Fax: 86-432-64671533 (Appendix):(Revision History) Date Last Rev. New Rev. Description of Changes :201412A 5/5 .


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