2SC5200A

NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications ：VCEO=230V (min)  2SA1943A  100W （RoHS） Package TO-3PL（T） FEATURES High collector voltage：VCEO=230V (min) Complementary to 2SA1943A Recommended for 100-W high-fidelity audio frequency amplifier output RoHS product TO-247 1 BASE 2 （）COLLECTOR (HEAT SINK) 3 EMITTER ORDER MESSAGE Order codes Marking 2SC5200A-O-AL-N-D 2SC5200A-O-AL-N-B 2SC5200A-O-W -N-B 2SC5200 2SC5200 2SC5200 Halogen Free NO NO NO Package TO-3PL(T) TO-3PL(T) TO-247 Packaging Weight Foam Box Tube Tube 9.53g(typ) 9.53g(typ) 6.03g(typ) ：201602B 1/5 R 2SC5200A ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) Parameter — Collector- Base Voltage — Collector- Emitter Voltage — Emitter-Base Voltage Collector Current Base Current TO-247 Collector Dissipation(Tc=25℃) TO-3PL Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg Value 230 230 5 15 1.5 120 160 150 -65~150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTIC Parameter Tests conditions Value(min) Value(typ) Value(max) ICBO IEBO V(BR)CEO hFE VCE(sat) VBE fT COb VCB=230V,IE=0 VEB=5V,IC=0 Ic=50mA,IB=0 VCE=5V,IC=1.0A VCE=5V,IC=7.0A IC=8.0A,IB=0.8A VCE=5V,IC=7.0A VCE=5V, Ic=1.0A VCE=10V, IE =0,f=1MHz - - 5.0 - - 5.0 230 - - 80 - 160 35 - - - - 3.0 - - 1.5 30 - - - 145 - Unit μA mA V V V MHz pF THERMAL C...