2SA1943B

PNP Silicon PNP Epitaxial Transistor R 2SA1943B z z：VCEO=250V (min) z 2SC5200B z 100W z（RoHS） APPLICATIONS z Power Amplifier Applications FEATURES zHigh collector voltage：VCEO=250V (min) zComplementary to 2SC5200B zRecommended for 100-W high-fidelity audio frequency amplifier output zRoHS product Package TO-3PLT TO-3PB 1 BASE 2 （）COLLECTOR (HEAT SINK) 3 EMITTER ORDER MESSAGE Order codes Marking 2SA1943B-O-AB -N-B 2SA1943B -O-AL-N-B 2SA1943B -O-AL-N-D 2SA1943 2SA1943 2SA1943 Halogen Free NO NO NO Package Packaging TO-3PB TO-3PLT TO-3PLT Tube Tube Foam Box Weight 6.03g(typ) 9.53g(typ) 9.53g(typ) ：201601A 1/5 R 2SA1943B ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted) — Parameter Collector- Base Voltage — Collector- Emitter Voltage — Emitter-Base Voltage Collector Current Base Current TO-3PB Collector Dissipation(Tc=25℃) TO-3PL Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg Value -350 -250 -5 -16 -1.6 150 200 150 -65~150 Unit V V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTIC(Tc=25℃ unless otherwise noted) Parameter ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(ON) fT COb Tests conditions VCB=-300V,IE=0 VEB=-5.0V,IC=0 Ic=-50mA,IB=0 VCE=-5.0V,IC=-0.5A VCE=-5.0V,IC=-1.0A VCE=-5.0V,IC=-3.0A IC=-5.0A,IB=-0.5A VCE=-5.0V,IC=-5.0A VCE=-5.0V, Ic=-1.0A VCE=-10V, IE =0,f=1MHz Value(min) Value(typ) Value(max) - - -10.0 - - -5.0 -250 - - 75 - 135 75 - ...