2SK2022-01M

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A ID(puls) Pulsed Drain Current 20 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 2SK2022-01M isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK2022-01M ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.0 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A 1.2 1.6 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 500 µA Ciss Input Dapacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz 1000 1...