INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1983-01
DESCRIPTION ·Drain Current...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
2SK1983-01
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching
regulators ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=25℃ 3 A
Ptot Total Dissipation@TC=25℃
60 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
2.08 ℃/W 75 ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
2SK1983-01
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
900
V
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current
VDS= VGS; ID=1mA VGS= 10V; ID= 1.5A VGS= ±30V;VDS= 0 VDS= 900V; VGS= 0
2.5
3.5 V 4Ω ±100 nA 500 µA
Ciss Input capacitance
1500
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
40 pF
Coss Output capacitance
135
tr Rise time td(o...