2SK1971

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 35 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1971 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 2SK1971 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VDF Body to drain diode forward voltage IF = 35A, VGS = 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 18A IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 Ciss Input capacitance Crss Reverse transfer capacitance Coss Output capacitance VDS=10V;VGS=0V; fT=1MHz tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=5A; VDD=200V; RL=6Ω toff Turn-off time MIN TYPE MAX UNIT 500 V ±20 V 2 3 V 1.1 V 0.19 0.23 Ω ±10 µA 250 µA 4320 130 pF 1120 170 50 ns 1...