2SK1933

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1933 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) 2SK1933 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 900 V V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA ±30 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VDF Body to drain diode forward voltage IF = 10 A, VGS = 0 2 3 V 0.9 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A 0.9 1.2 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±10 µA IDSS Zero Gate Voltage Drain Current VDS= 720V; VGS= 0 250 µA Ciss Input capacitance 2620 Crss Reverse transfer capacitance VDS=10V;VGS=0V;fT=1MHz 320 pF Coss Output capacitance 830 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=5A; VDD=200V; RL=6Ω 140 30 ns 170 toff Turn-off time 28...