2SK1924

isc N-Channel MOSFET Transistor 2SK1924 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1924 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 600 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA 2.0 3.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3A 1.1 1.5 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 480V; VGS= 0 1 mA Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=20V; VGS=0V; fT=1MHz 1100 45 pF 150 tr Rise Time ton Turn-on Time tf Fall Time VGS=10V; ID=4A; VDD=200V; RL=50Ω 25 18 ns 60 toff Turn-off Time 240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information ...