isc N-Channel MOSFET Transistor
2SK1923
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(M...
isc N-Channel MOSFET
Transistor
2SK1923
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Chopper
regulator and motor drive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4
A
Ptot
Total Dissipation@TC=25℃
60
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc N-Channel MOSFET
Transistor
2SK1923
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
600
V
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1mA
2.0
3.0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2A
1.8
2.4
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS= 480V; VGS= 0
1
mA
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=20V; VGS=0V; fT=1MHz
700
30
pF
90
tr
Rise Time
ton
Turn-on Time
tf
Fall Time
VGS=10V; ID=4A; VDD=200V; RL=50Ω
15
3 ns
40
toff
Turn-off Time
160
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informa...