2SK1922

isc N-Channel MOSFET Transistor 2SK1922 DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1922 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage V(BR)GSS Gate-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time CONDITIONS VGS= 0; ID= 10mA VDS= 0; IG= 100mA VDS= 10V; ID=1mA VGS= 10V; ID= 1A VGS= ±30V;VDS= 0 VDS= 480V; VGS= 0 VDS=20V; VGS=0V; fT=1MHz VGS=10V; ID=2A; VDD=200V; RL=15Ω MIN TYPE MAX UNIT 600 V ±30 V 2.0 3.0 V 4.3 Ω ±100 nA 1 mA 400 15 pF 55 12 10 ns 40 65 NOTICE： ISC reserves the rights to make changes of the content herein the da...