2SK1821

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Chopper regulator and motor drive ·DC-DC converters ·UPS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4.167 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 2SK1821 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1821 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=10mA VDF Body to drain diode forward voltage IF = 4 A, VGS = 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 Ciss Input Cpacitance Crss Reverse Tansfer Cpacitance Coss Output Cpacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Tme ton Turn-on Tme tf Fall Tme toff Turn-off Tme VGS=10V; ID=2A; VDD=300V...