2SK1819

isc N-Channel MOSFET Transistor 2SK1819 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Chopper regulator ·Motor drive ·Inverters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.57 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK1819 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 450 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=10mA 2.1 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A 0.78 2.5 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 500 µA Ciss Input capacitance Crss Reverse transfer capacitance Coss Output capacitance VDS=25V; VGS=0V; fT=1MHz 500 750 40 60 pF 80 120 tr Rise time ton Turn-on time tf Fall time VGS=1...