2SK1692

isc N-Channel MOSFET Transistor 2SK1692 DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed. high current switching applications. ·DC-DC converter and motor driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 7 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.833 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 50.00 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1692 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA MIN TYP MAX UNIT 900 V VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3.5A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 1.5 3.5 V 1.7 2.0 Ω ±100 nA 300 uA VSD Diode Forward Voltage IF=7A; VGS=0 2.0 V tr Rise time 70 ns ton Turn-on time tf Fall time 100 ns VGS=10V;ID=3.5A;RL=110Ω 100 ns toff Turn-off t...