SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT
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Vishay Semiconductors
Optocoupler Phototransistor Output, SOP-4, Mini-Flat Package, 110 °C Rated
i179066
A1 C2
4C 3E
DESCRIPTION
The 110 °C rated SFH1690AT, SFH1690BT, SFH1690CT, and SFH1690ABT family has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH1690 series is available only on tape and reel. There are 2000 parts per reel.
FEATURES
• Operating temperature from - 55 °C to + 110 °C
• SOP (small outline package)
• Isolation test voltage, 3750 VRMS (1 s) • Low saturation voltage
• Fast switching times • Low coupling capacitance
Available
• End-stackable, 0.100" (2.54 mm) spacing
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • PLCs • Telecommunication
AGENCY APPROVALS • UL1577, file no. E52744 system code U • cUL - file no. E52744, cUL tested to CSA 22.2 bulletin 5A • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending) available with option 1 • BSI tested to IEC 60065 and IEC 60950-2001
ORDERING INFORMATION
SFH1 6 9 0 # #T - X0 0 1
PART NUMBER
TAPE AND REEL
VDE OPTION
AGENCY CERTIFIED/PACKAGE
CTR (%)
UL, cUL, BSI
50 to 300
50 to 150
100 to 300
SOP-4, Mini flat
SFH1690ABT
SFH1690AT
SFH1690BT
VDE, UL, cUL, BSI
50 to 300
50 to 150
100 to 300
SOP-4, Mini flat
- - SFH1690BT-X001
Note • For additional information on the available options refer to option information.
SOP-4
7.21 mm
100 to 200 SFH1690CT 100 to 200
-
Rev. 2.1, 23-May-13
1 Document Number: 83537
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
DC forward current Reverse voltage Surge forward current Power dissipation Derate linearly from 25 °C
tp ≤ 10 μs
IF VR IFSM Pdiss
50 mA 6V 2.5 A 80 mW 0.7 mW/°C
OUTPUT
Collector emitter voltage Emitter collector voltage
Collector current
Power dissipation Derate linearly from 25 °C COUPLER
tp ≤ 1 ms
VCEO VECO
IC IC Pdiss
70 V 7V 50 mA 100 mW 150 mW 1.5 mW/°C
Isolation test voltage between emitter and detector
t=1s
VISO
3750
VRMS
Operating temperature range Storage temperature range
Soldering temperature
max. 10 s dip soldering distance to seating plane ≥ 1.5 mm
Tamb Tstg
Tsld
- 55 to + 110 - 55 to + 150
260
°C °C
°C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
175
Ptot - Power Dissipation (mW)
150 Phototransistor
125
100
75 50 Diode
25
0 0 20 40 60 80 100
17567
Tamb - Ambient Temperature (°C)
120
Fig. 1 - Permissible Power Dissipation vs. Temperature
Rev. 2.1, 23-May-13
2 Document Number: 83537
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage Reverse current Capacitance OUTPUT
IF = 5 mA VR = 6 V VR = 0 V, f = 1 MHz
VF
1.15 1.4
V
IR
0.01 10
μA
CO 14 pF
Collector emitter leakage current
VCE = 20 V
ICEO
100 nA
Collector emitter breakdown voltage
IC = 100 μA
BVCEO
70
V
Emitter collector breakdown voltage
IE = - 10 μA
BVECO
7
V
Collector emitter saturation voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25 0.4
V
Collector emitter capacitance COUPLER
VCE = 5 V, f = 1 MHz
CCE 2.8
pF
Coupling capacitance Capacitance (input to output)
f = 1 MHz
CC 0.3 pF CIO 0.5 pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
SFH1690ABT CTR
SFH1690AT
CTR
I.