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SFH1690BT Dataheets PDF



Part Number SFH1690BT
Manufacturers Vishay
Logo Vishay
Description GaAs infrared emitting diode emitter
Datasheet SFH1690BT DatasheetSFH1690BT Datasheet (PDF)

SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT www.vishay.com Vishay Semiconductors Optocoupler Phototransistor Output, SOP-4, Mini-Flat Package, 110 °C Rated i179066 A1 C2 4C 3E DESCRIPTION The 110 °C rated SFH1690AT, SFH1690BT, SFH1690CT, and SFH1690ABT family has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low c.

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SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT www.vishay.com Vishay Semiconductors Optocoupler Phototransistor Output, SOP-4, Mini-Flat Package, 110 °C Rated i179066 A1 C2 4C 3E DESCRIPTION The 110 °C rated SFH1690AT, SFH1690BT, SFH1690CT, and SFH1690ABT family has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH1690 series is available only on tape and reel. There are 2000 parts per reel. FEATURES • Operating temperature from - 55 °C to + 110 °C • SOP (small outline package) • Isolation test voltage, 3750 VRMS (1 s) • Low saturation voltage • Fast switching times • Low coupling capacitance Available • End-stackable, 0.100" (2.54 mm) spacing • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • PLCs • Telecommunication AGENCY APPROVALS • UL1577, file no. E52744 system code U • cUL - file no. E52744, cUL tested to CSA 22.2 bulletin 5A • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending) available with option 1 • BSI tested to IEC 60065 and IEC 60950-2001 ORDERING INFORMATION SFH1 6 9 0 # #T - X0 0 1 PART NUMBER TAPE AND REEL VDE OPTION AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, BSI 50 to 300 50 to 150 100 to 300 SOP-4, Mini flat SFH1690ABT SFH1690AT SFH1690BT VDE, UL, cUL, BSI 50 to 300 50 to 150 100 to 300 SOP-4, Mini flat - - SFH1690BT-X001 Note • For additional information on the available options refer to option information. SOP-4 7.21 mm 100 to 200 SFH1690CT 100 to 200 - Rev. 2.1, 23-May-13 1 Document Number: 83537 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT DC forward current Reverse voltage Surge forward current Power dissipation Derate linearly from 25 °C tp ≤ 10 μs IF VR IFSM Pdiss 50 mA 6V 2.5 A 80 mW 0.7 mW/°C OUTPUT Collector emitter voltage Emitter collector voltage Collector current Power dissipation Derate linearly from 25 °C COUPLER tp ≤ 1 ms VCEO VECO IC IC Pdiss 70 V 7V 50 mA 100 mW 150 mW 1.5 mW/°C Isolation test voltage between emitter and detector t=1s VISO 3750 VRMS Operating temperature range Storage temperature range Soldering temperature max. 10 s dip soldering distance to seating plane ≥ 1.5 mm Tamb Tstg Tsld - 55 to + 110 - 55 to + 150 260 °C °C °C Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. 175 Ptot - Power Dissipation (mW) 150 Phototransistor 125 100 75 50 Diode 25 0 0 20 40 60 80 100 17567 Tamb - Ambient Temperature (°C) 120 Fig. 1 - Permissible Power Dissipation vs. Temperature Rev. 2.1, 23-May-13 2 Document Number: 83537 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage Reverse current Capacitance OUTPUT IF = 5 mA VR = 6 V VR = 0 V, f = 1 MHz VF 1.15 1.4 V IR 0.01 10 μA CO 14 pF Collector emitter leakage current VCE = 20 V ICEO 100 nA Collector emitter breakdown voltage IC = 100 μA BVCEO 70 V Emitter collector breakdown voltage IE = - 10 μA BVECO 7 V Collector emitter saturation voltage IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V Collector emitter capacitance COUPLER VCE = 5 V, f = 1 MHz CCE 2.8 pF Coupling capacitance Capacitance (input to output) f = 1 MHz CC 0.3 pF CIO 0.5 pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL SFH1690ABT CTR SFH1690AT CTR I.


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