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BAT54V

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes BAT54V SCHOTTKY BARRIER DIODE F...


JCET

BAT54V

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes BAT54V SCHOTTKY BARRIER DIODE FEATURES Surface mount schottky barrier diode arrays SOT-563 654 Marking: KAV Solid dot = Green molding compound device,if none, the normal device. Solid dot = Pin1 indicate. 1 23 Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking V oltage Average Rectified Output Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5 Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR IO IFSM IFRM PD RθJA TJ TSTG Limit 30 200 600 300 150 667 125 -65-125 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakag e current Forward voltage Total capacitance Reverse recovery time Symbol V(BR) IR VF CT t rr Test conditions IR= 100μA VR=25V IF=1mA IF=10mA IF=30mA IF=100mA VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100Ω Min 30 Max 2 320 400 500 1000 10 5 Unit V mA mA mA mW ℃/W ℃ ℃ Unit V uA mV pF ns www.cj-elec.com 1 F,Oct,2015 Typical Characteristics Forward Characteristics 1000 oC a =100 oC T =25 T a FORWARD CURRENT I (mA) F 100 10 1 0.1 0.01 0 200 400 600 800 FORWARD VOLTAGE V (mV) F 1000 REVERSE CURRENT I (uA) R Reverse Characteristics 100 T =100 oC a 10 1 T =25 oC a 0.1 0.01 0 5 10 15 20 25 REVERSE VOLTAGE V (V)...




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