JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Diodes
BAT54V
SCHOTTKY BARRIER DIODE
F...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Diodes
BAT54V
SCHOTTKY BARRIER DIODE
FEATURES Surface mount
schottky barrier diode arrays
SOT-563
654
Marking: KAV
Solid dot = Green molding compound device,if none, the normal device.
Solid dot = Pin1 indicate.
1 23
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking V oltage Average Rectified Output Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Repetitive Peak Forward Current @ t≤1s,δ≤0.5
Power Dissipation
Thermal Resistance Junction to Ambient Junction Temperature
Storage Temperature
Symbol VRRM VRWM VR IO
IFSM IFRM PD
RθJA TJ
TSTG
Limit
30
200 600 300 150 667 125 -65-125
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakag e current
Forward voltage
Total capacitance Reverse recovery time
Symbol V(BR) IR
VF
CT t rr
Test conditions
IR= 100μA
VR=25V
IF=1mA IF=10mA IF=30mA IF=100mA
VR=1V,f=1MHz
IF=10mA, IR=10mA~1mA RL=100Ω
Min 30
Max
2 320 400 500 1000 10
5
Unit V
mA mA mA mW ℃/W ℃ ℃
Unit V
uA
mV
pF
ns
www.cj-elec.com
1
F,Oct,2015
Typical Characteristics
Forward Characteristics
1000
oC
a =100 oC
T
=25
T a
FORWARD CURRENT I (mA) F
100
10
1
0.1
0.01 0
200 400 600 800
FORWARD VOLTAGE V (mV) F
1000
REVERSE CURRENT I (uA) R
Reverse Characteristics
100
T =100 oC a
10
1
T =25 oC a
0.1
0.01 0
5 10 15 20 25
REVERSE VOLTAGE V (V)...