JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAT54T/AT/CT/ST SCHOTTKY BARRIER ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAT54T/AT/CT/ST
SCHOTTKY BARRIER DIODE
FEATURES z Low Forward Voltage Drop
z Fast Switching
z PN Junction Guard Ring for Transient and ESD Protection
BAT54T
BAT54AT
BAT54CT
BAT54ST
SOT-523
MARKING: BA77
BA7$7
BA7&7
BA767
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
VRRM VRWM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage
30
VR(RMS)
RMS Reverse Voltage
21
IO Average Rectified Output Current
0.2
IFSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms
600
IFRM Repetitive Peak Forward Surge Current @ t≤1s;δ≤0.5 300
PD Power Dissipation
150
RΘJA
Thermal Resistance from Junction to Ambient
667
Tj Junction Temperature
125
Tstg Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage Reverse current
V(BR) IR
IR=100μA VR=25V IF=1mA
30
Forward voltage
IF=10mA VF
IF=30mA
IF=100mA
Total capacitance Reverse recovery time
Ctot VR=1V,f=1MHz trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω
Unit
V V A mA mA mW ℃/W ℃ ℃
Typ Max
2 0.32 0.4 0.5
1 10 5
Unit V μA
V
pF ns
www.cj-elec.com
1
F,Oct,2015
Typical Characteristics
FORWARD CURRENT IF (mA)
Forward Characteristics
100
10
℃
=25℃
=100
T
a
T a
1
0.1 0
200 400 600
FORWARD VOLTAGE VF (mV)
Capacitance Ch...