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BAT54T

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAT54T/AT/CT/ST SCHOTTKY BARRIER ...


JCET

BAT54T

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAT54T/AT/CT/ST SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Fast Switching z PN Junction Guard Ring for Transient and ESD Protection BAT54T BAT54AT BAT54CT BAT54ST SOT-523 MARKING: BA77 BA7$7 BA7&7 BA767 Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value VRRM VRWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 30 VR(RMS) RMS Reverse Voltage 21 IO Average Rectified Output Current 0.2 IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 600 IFRM Repetitive Peak Forward Surge Current @ t≤1s;δ≤0.5 300 PD Power Dissipation 150 RΘJA Thermal Resistance from Junction to Ambient 667 Tj Junction Temperature 125 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Reverse voltage Reverse current V(BR) IR IR=100μA VR=25V IF=1mA 30 Forward voltage IF=10mA VF IF=30mA IF=100mA Total capacitance Reverse recovery time Ctot VR=1V,f=1MHz trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω Unit V V A mA mA mW ℃/W ℃ ℃ Typ Max 2 0.32 0.4 0.5 1 10 5 Unit V μA V pF ns www.cj-elec.com 1 F,Oct,2015 Typical Characteristics FORWARD CURRENT IF (mA) Forward Characteristics 100 10 ℃ =25℃ =100 T a T a 1 0.1 0 200 400 600 FORWARD VOLTAGE VF (mV) Capacitance Ch...




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