Si2304BDS

N-Channel 30 V (D-S) MOSFET Si2304BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V ID (A) 3.2 2.6 Qg (Typ.) 2.6 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D Top View Si2304BDS (L4)* * Marking Code Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 3.2 2.6 2.5 2.1 Pulsed Drain Current IDM 10 Continuous Source Current (Diode Conduction)a, b IS 0.9 0.62 Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.08 0.69 0.75 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t5s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface mounted on FR4 board, t  5 s. b. Pulse width limited by maximum junction temperature. c. Surface mounted on FR4 board. Symbol RthJA RthJF Typical 90 130 60 For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Maximum 115 166 75 Unit V A W °C Unit °C/W Document Number: 72503 www.vishay.com S11-1908-Rev. E...