N-channel MOSFET
N-Channel 30 V (D-S) MOSFET
Si2304BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.070 at VGS = 10 V 0....
Description
N-Channel 30 V (D-S) MOSFET
Si2304BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V
ID (A) 3.2 2.6
Qg (Typ.) 2.6
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2304BDS (L4)* * Marking Code
Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
3.2 2.6 2.5 2.1
Pulsed Drain Current
IDM 10
Continuous Source Current (Diode Conduction)a, b
IS 0.9 0.62
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
PD
1.08 0.69
0.75 0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta
t5s Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes: a. Surface mounted on FR4 board, t 5 s. b. Pulse width limited by maximum junction temperature. c. Surface mounted on FR4 board.
Symbol RthJA RthJF
Typical 90 130 60
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Maximum 115 166 75
Unit V
A
W °C
Unit °C/W
Document Number: 72503
www.vishay.com
S11-1908-Rev. E...
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