DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D102
BAS70W series Schottky barrier (double) diodes
Product specific...
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D102
BAS70W series
Schottky barrier (double) diodes
Product specification Supersedes data of 1996 Mar 19
1999 Mar 26
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
FEATURES Low forward voltage High breakdown voltage Guard ring protected Very small SMD package Low capacitance.
APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes.
PINNING
BAS70 PIN
W -04W -05W -06W
1 a1 a1 a1 k1 2 n.c. k2 a2 k2 3 k1 k1, a2 k1, k2 a1, a2
handbook, 2 columns
3
DESCRIPTION
Planar
Schottky barrier diodes. Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W; -05W; -06W) are available.
The diodes are encapsulated in a SOT323 very small plastic SMD package.
1 Top view
2
MBC870
Fig.1 Simplified outline (SOT323) and pin configuration.
MARKING
TYPE NUMBER
BAS70W BAS70-04W BAS70-05W BAS70-06W
MARKING CODE(1)
73∗ 74∗ 75∗ 76∗
Note
1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia.
3
12 n.c.
MLC357
Fig.2 BAS70W single diode configuration (symbol).
3 12
MLC358
Fig.3 BAS70-04W diode configuration (symbol).
3 12
MLC359
Fig.4 BAS70-05W diode configuration (symbol).
3 12
MLC360
Fig.5 BAS70-06W diode configuration (symbol).
1999 Mar 26
2
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
...