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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D102
BAS70W series Schottky barrier (double) diodes
Product specification Supersedes data of 1996 Mar 19
1999 Mar 26
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Very small SMD package • Low capacitance.
APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes.
PINNING
BAS70 PIN
W -04W -05W -06W
1 a1 a1 a1 k1 2 n.c. k2 a2 k2 3 k1 k1, a2 k1, k2 a1, a2
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier diodes. Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W; -05W; -06W) are available.
The diodes are encapsulated in a SOT323 very small plastic SMD package.
1 Top view
2
MBC870
Fig.1 Simplified outline (SOT323) and pin configuration.
MARKING
TYPE NUMBER
BAS70W BAS70-04W BAS70-05W BAS70-06W
MARKING CODE(1)
73∗ 74∗ 75∗ 76∗
Note
1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia.
3
12 n.c.
MLC357
Fig.2 BAS70W single diode configuration (symbol).
3 12
MLC358
Fig.3 BAS70-04W diode configuration (symbol).
3 12
MLC359
Fig.4 BAS70-05W diode configuration (symbol).
3 12
MLC360
Fig.5 BAS70-06W diode configuration (symbol).
1999 Mar 26
2
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR IF IFRM IFSM Tstg Tj Tamb
continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature
tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms
MIN. MAX. UNIT
− 70 V − 70 mA − 70 mA − 100 mA −65 +150 °C − 150 °C −65 +150 °C
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode VF forward voltage
IR reverse current
τ charge carrier life time (Krakauer method) Cd diode capacitance Note 1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.6 IF = 1 mA IF = 10 mA IF = 15 mA
VR = 50 V; note 1; see Fig.7 VR = 70 V; note 1; see Fig.7 IF = 5 mA f = 1 MHz; VR = 0; see Fig.9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT323 standard mounting conditions.
MAX.
UNIT
410 mV 750 mV 1V 100 nA 10 µA 100 ps 2 pF
VALUE 625
UNIT K/W
1999 Mar 26
3
Philips Semiconductors
Schottky barrier (double) diodes
GRAPHICAL DATA
10 2 IF (mA)
10
MRA803
1
10 1
(1) (2) (3) (4)
10 2 0
0.2 0.4 0.6 0.8
1
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig.6 Forward current as a function of forward voltage; typical values.
103 rdiff
102
MRA802
10
1 10−1
1
10 102 IF (mA)
Product specification
BAS70W series
10 2 IR (µA)
10
MRA805
(1)
1 (2)
10 1 10 2
(3)
10 3 0
20 40 60 80 VR (V)
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.7 Reverse current as a function of reverse voltage; typical values.
2 Cd (pF)
1.5
MRA804
1
0.5
0 0 20 40 60 80 VR (V)
f = 10 kHz.
Fig.8 Differential forward resistance as a function of forward current; typical values.
f = 1 MHz; Tamb = 25 °C.
Fig.9 Diode capacitance as a function of reverse voltage; typical values.
1999 Mar 26
4
Philips Semiconductors
Schottky barrier (double) diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
DB
Product specification
BAS70W series
SOT323
E AX
y
3
1
e1 bp e
2
wM B
HE v M A
A A1
Q
Lp detail X
c
0 1 2 mm scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 max
bp
cD
E
e e1 HE Lp Q
v
w
mm
1.1 0.8
0.1
0.4 0.3
0.25 2.2 0.10 1.8
1.35 1.15
1.3
0.65
2.2 2.0
0.45 0.23 0.15 0.13
0.2
0.2
OUTLINE VERSION
SOT323
IEC
REFERENCES
JEDEC
EIAJ
SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Mar 26
5
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70W series
DEFINITIONS
Data sheet status
Objective specification Preliminary specification Product specification
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These .