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BAS70W Dataheets PDF



Part Number BAS70W
Manufacturers Philips
Logo Philips
Description Schottky barrier (double) diodes
Datasheet BAS70W DatasheetBAS70W Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BAS70W series Schottky barrier (double) diodes Product specification Supersedes data of 1996 Mar 19 1999 Mar 26 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70W series FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Very small SMD package • Low capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. PINNING BA.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BAS70W series Schottky barrier (double) diodes Product specification Supersedes data of 1996 Mar 19 1999 Mar 26 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70W series FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Very small SMD package • Low capacitance. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. PINNING BAS70 PIN W -04W -05W -06W 1 a1 a1 a1 k1 2 n.c. k2 a2 k2 3 k1 k1, a2 k1, k2 a1, a2 handbook, 2 columns 3 DESCRIPTION Planar Schottky barrier diodes. Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W; -05W; -06W) are available. The diodes are encapsulated in a SOT323 very small plastic SMD package. 1 Top view 2 MBC870 Fig.1 Simplified outline (SOT323) and pin configuration. MARKING TYPE NUMBER BAS70W BAS70-04W BAS70-05W BAS70-06W MARKING CODE(1) 73∗ 74∗ 75∗ 76∗ Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. 3 12 n.c. MLC357 Fig.2 BAS70W single diode configuration (symbol). 3 12 MLC358 Fig.3 BAS70-04W diode configuration (symbol). 3 12 MLC359 Fig.4 BAS70-05W diode configuration (symbol). 3 12 MLC360 Fig.5 BAS70-06W diode configuration (symbol). 1999 Mar 26 2 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70W series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms MIN. MAX. UNIT − 70 V − 70 mA − 70 mA − 100 mA −65 +150 °C − 150 °C −65 +150 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER Per diode VF forward voltage IR reverse current τ charge carrier life time (Krakauer method) Cd diode capacitance Note 1. Pulse test: tp = 300 µs; δ = 0.02. CONDITIONS see Fig.6 IF = 1 mA IF = 10 mA IF = 15 mA VR = 50 V; note 1; see Fig.7 VR = 70 V; note 1; see Fig.7 IF = 5 mA f = 1 MHz; VR = 0; see Fig.9 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient note 1 Note 1. Refer to SOT323 standard mounting conditions. MAX. UNIT 410 mV 750 mV 1V 100 nA 10 µA 100 ps 2 pF VALUE 625 UNIT K/W 1999 Mar 26 3 Philips Semiconductors Schottky barrier (double) diodes GRAPHICAL DATA 10 2 IF (mA) 10 MRA803 1 10 1 (1) (2) (3) (4) 10 2 0 0.2 0.4 0.6 0.8 1 VF (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. Fig.6 Forward current as a function of forward voltage; typical values. 103 rdiff 102 MRA802 10 1 10−1 1 10 102 IF (mA) Product specification BAS70W series 10 2 IR (µA) 10 MRA805 (1) 1 (2) 10 1 10 2 (3) 10 3 0 20 40 60 80 VR (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.7 Reverse current as a function of reverse voltage; typical values. 2 Cd (pF) 1.5 MRA804 1 0.5 0 0 20 40 60 80 VR (V) f = 10 kHz. Fig.8 Differential forward resistance as a function of forward current; typical values. f = 1 MHz; Tamb = 25 °C. Fig.9 Diode capacitance as a function of reverse voltage; typical values. 1999 Mar 26 4 Philips Semiconductors Schottky barrier (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads DB Product specification BAS70W series SOT323 E AX y 3 1 e1 bp e 2 wM B HE v M A A A1 Q Lp detail X c 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp cD E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 2.2 0.10 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.23 0.15 0.13 0.2 0.2 OUTLINE VERSION SOT323 IEC REFERENCES JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Mar 26 5 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70W series DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These .


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