JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAR43/A/C/S SCHOTTKY BARRIER DIODE...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAR43/A/C/S
SCHOTTKY BARRIER DIODE
SOT-23
FEATURES z Low Current Leakage z For General Purpose Switching Applications
BAR43
BAR43A
BAR43C
BAR43S
MARKING:D95
MARKING: BAR43
MARKING: DB1 BAR43A
MARKING:DB2 BAR43C
MARKING:DA5 BAR43S
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
VRRM VRWM VR(RMS) IF(AV) IFSM
PD RΘJA
Tj Tstg
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
30
21 200 0.75 200 500 125 -55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current
Symbol V(BR) IR
Test conditions IR=100μA VR=25V IF=2mA
Min 30
0.26
Forward voltage
VF IF=15mA
Reverse recovery time
IF=100mA trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω
Unit
V
V mA A mW ℃/W ℃ ℃
Typ Max
0.5 0.33 0.45 0.8
5
Unit V μA
V
ns
www.cj-elec.com
1
F,Oct,2015
Typical Characteristics
Forward Characteristics
200 100
T a =100 oC
oC
=25
T a
FORWARD CURRENT I (mA) F
10
1
0.1
0.01 0
200 400 600
FORWARD VOLTAGE V (mV) F
800
REVERSE CURRENT I (uA) R
Reverse Characteristics
100
T =100 oC a
10
1
T =25 oC a
0.1
0.01 0
5 10 15 20 25
REVERSE V...