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BAR43S

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAR43/A/C/S SCHOTTKY BARRIER DIODE...


JCET

BAR43S

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAR43/A/C/S SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Low Current Leakage z For General Purpose Switching Applications BAR43 BAR43A BAR43C BAR43S MARKING:D95 MARKING: BAR43 MARKING: DB1 BAR43A MARKING:DB2 BAR43C MARKING:DA5 BAR43S Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value VRRM VRWM VR(RMS) IF(AV) IFSM PD RΘJA Tj Tstg Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 30 21 200 0.75 200 500 125 -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Symbol V(BR) IR Test conditions IR=100μA VR=25V IF=2mA Min 30 0.26 Forward voltage VF IF=15mA Reverse recovery time IF=100mA trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω Unit V V mA A mW ℃/W ℃ ℃ Typ Max 0.5 0.33 0.45 0.8 5 Unit V μA V ns www.cj-elec.com 1 F,Oct,2015 Typical Characteristics Forward Characteristics 200 100 T a =100 oC oC =25 T a FORWARD CURRENT I (mA) F 10 1 0.1 0.01 0 200 400 600 FORWARD VOLTAGE V (mV) F 800 REVERSE CURRENT I (uA) R Reverse Characteristics 100 T =100 oC a 10 1 T =25 oC a 0.1 0.01 0 5 10 15 20 25 REVERSE V...




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