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B2020W

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B2020W SCHOTTKY BARRIER DIODE FEA...


JCET

B2020W

File Download Download B2020W Datasheet


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B2020W SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Very Small SMD Package APPLICATIONS z Low Voltage Rectification z High Efficiency DC/DC Conversion z Switch Mode Power Supply z Inverse Polarity Protection z Low Power Consumption Applications MARKING: SH SOD-123 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value VRRM VRWM VR(RMS) IF IFSM PD Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation Note1 Note2 20 14 2 9 300 670 RΘJA Thermal Resistance from Junction to Ambient Note1 Note2 333 149 Tj Junction Temperature 125 Tstg Storage Temperature -55~+150 1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2:Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. Unit V V A A mW mW ℃/W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse current Symbol V(BR) IR Forward voltage Total capacitance *Pulse test: tp ≤ 300 μs; δ ≤ 0.02. VF* Ctot Test conditions IR=1mA VR=10V VR=20V IF=1A IF=2A VR=4V,f=1MHz Min Typ Max 20 80 100 0.45 0.55 120 Unit V μA V pF www.cj-ele...




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