JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
B0520X SCHOTTKY BARRIER DIODE
SO...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-523 Plastic-Encapsulate Diodes
B0520X
SCHOTTKY BARRIER DIODE
SOD-523
FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance
z Also Available in Lead Free Version MARKING:
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage
RMS reverse voltage reverse voltage (DC) Average rectified output current @Not=n8-r.3empestitive Peak Forward Surge Current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature
Symb ol VRRM VRWM VR VR(RMS) Io IFSM PD RθJA Tj TSTG
Electrical Characteristics @Ta=25℃
Parameter
Sy mbol
Minimum reverse breakdown voltage
V(BR)
Forward voltage Reverse current
VF1 VF2 VF3 VF4 VF5
IR
Capacitance between terminals
CT
Min 20
Typ
Value
20
14 0.5 5.5 150 667 125 -55~+150
Max
180 240 290 380 600 50 30
Unit V
mV mV μA pF
Unit
V
V A A mW ℃/W ℃ ℃
Conditions
IR=250μA
IF=0.1mA IF=1mA IF=10mA IF=100mA IF=500mA VR=10V
VR=1V,f=1MHz
www.cj-elec.com
1
A-1,Aug,2015
Typical Characteristics
FORWARD CURRENT IF (mA)
Forward Characteristics
500
100
T
=100
a
℃
10
T
=25℃
a
1
0.1 0
100 200 300 400
FORWARD VOLTAGE VF (mV)
500
Capacitance Characteristics
50
T =25℃ a
f=1MHz
40
30
20
10
0 0 5 10 15 20 25 30
REVERSE VOLTAGE VR (V)
...