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B0520X

JCET

SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes B0520X SCHOTTKY BARRIER DIODE SO...


JCET

B0520X

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes B0520X SCHOTTKY BARRIER DIODE SOD-523 FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING: The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25℃ Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage reverse voltage (DC) Average rectified output current @Not=n8-r.3empestitive Peak Forward Surge Current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature Symb ol VRRM VRWM VR VR(RMS) Io IFSM PD RθJA Tj TSTG Electrical Characteristics @Ta=25℃ Parameter Sy mbol Minimum reverse breakdown voltage V(BR) Forward voltage Reverse current VF1 VF2 VF3 VF4 VF5 IR Capacitance between terminals CT Min 20 Typ Value 20 14 0.5 5.5 150 667 125 -55~+150 Max 180 240 290 380 600 50 30 Unit V mV mV μA pF Unit V V A A mW ℃/W ℃ ℃ Conditions IR=250μA IF=0.1mA IF=1mA IF=10mA IF=100mA IF=500mA VR=10V VR=1V,f=1MHz www.cj-elec.com 1 A-1,Aug,2015 Typical Characteristics FORWARD CURRENT IF (mA) Forward Characteristics 500 100 T =100 a ℃ 10 T =25℃ a 1 0.1 0 100 200 300 400 FORWARD VOLTAGE VF (mV) 500 Capacitance Characteristics 50 T =25℃ a f=1MHz 40 30 20 10 0 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) ...




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