JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B0520WS/B0530WS/B0540WS
SCHOTTKY ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B0520WS/B0530WS/B0540WS
SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING:
B0520WS:SD B0530WS:SE B0540WS:SF
SOD-323
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25℃
Parameter
Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage
RMS reverse voltage reverse voltage (DC) Average rectified output current @Not=n8-r.3empestitive Peak Forward Surge Current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature Voltage rate of change
Symbol VRRM VRWM VR VR(RMS) Io IFSM PD RθJA Tj TSTG dv/dt
B0520WS 20 14
B0530WS
30
21 0.5 5.5 200 500 125 -55~+150 1000
B0540WS Unit
40 V
28 V A A
mW ℃/W
℃ ℃ V/μs
Electrical Characteristics @Ta=25℃
Parameter Sy
mbol
Minimum reverse breakdown voltage
V(BR)
Forward voltage
Reverse current
Reverse current Capacitance between terminals www.cj-elec.com
VF1 VF2 VF3 IR1 IR2 IR3 IR4 IR5 CT
B0520WS 20 ---
0.33 0.39
-75 -250 --170
B0530WS -30 --
0.36 0.45
--80 100 500 -170
1
B0540WS --40 --
0.510 0.62 --10 -20 170
Unit V
V μA μA pF
Conditions IR=250μA IR=500μA IR=20μA
IF=0.1A IF=0.5A IF=1A VR=10V VR=15V VR=20V VR=30V VR=40V VR=0,f=1MHz
F,Mar,2015
Typical Characteristics
10 Forwar...