Document
1SS344
SCHOTTKY BARRIER DIODE
FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching
SOT-23
MARKING: H9
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Forward Continuous Current
IFM Peak Forward Current
IFSM Surge Current@10ms
PD Power Dissipation
RθJA
Thermal Resistance From Junction To Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value 20 500 1.5 5 200 500 125
-55~+150
Unit V mA A A
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current
Forward voltage
Total capacitance Reverse recovery time
Symbol V(BR) IR
VF
Ctot trr
Test conditions IR=100μA VR=10V VR=20V IF=10mA IF=100mA IF=500mA VR=0V, f=1MHz IF= IR=50mA, VR=6V
Min Typ Max 20
20 100 0.35 0.43 0.55 120 20
Unit V μA
V
pF ns
JinYu
semiconductor
www.htsemi.com
.