DSS70LED02

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes DSS70LED02 Schottky barrier diode DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection. FEATURES z Low diode capacitance z Low forward voltage z Guard ring protected z High breakdown voltage WBFBP-02C APPLICATIONS z Ultra high-speed switching z Voltage clamping z Protection circuits z Mobile communication ,digital (still) cameras , PDAs and PCMCIA cards MARKING: S5 -+ Maximum ratings (Ta=25℃ unless otherwise noted) Parameter DC Reverse Voltage Continuous Forward Current Non-Repetitive @t=8.3ms Peak Forward Surge Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VR IF IFSM PD RθJA TJ Tstg Limits 70 70 100 100 1000 125 -55~+150 Unit V mA mA mW ℃/W ℃ ℃ www.cj-elec.com 1 E,Mar,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Min Typ Max Unit Continuous forward voltage VF Continuous reverse current* IR Diode capacitance Cd *Pulse Test: Pulse width=300μs;Duty cycle=0.02. 410 750 1000 100 500 2 mV nA pF Conditions IF=1mA IF =10mA IF =15mA VR=50V VR=70V VR=0V, f=1MHz www.cj-elec.com 2 E,Mar,2015 Typical Characteristics 100 Pulsed Forward Characteristics 10 T a =100℃ =25℃ FORWARD CURRENT I (mA) F 1 T a 0.1 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 REVERSE CURRENT I (uA) R 10 Pulsed Rev...