2SD2606

Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington For power amplification Unit: mm s Features q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 500 400 12 14 7 50 1.4 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 10.5±0.3 2.54±0.3 1.4±0.1 0.8±0.1 2.54±0.3 123 Internal Connection B s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ Collector cutoff current ICBO VCB = 500V, IE = 0 ICEO VCE = 400V, IE = 0 Emitter cutoff current IEBO VEB = 12V, IC = 0 Collector to emitter voltage VCEO(sus)* IC = 100mA, RBE = ∞ 400 Forward current transfer ratio hFE1 hFE2 VCE = 2V, IC = 2A VCE = 2V, IC = 6A 500 200 Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 70mA Base to emitter saturation voltage VBE(sat) IC = 7A, IB = 70mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz 20 Turn-on time Storage time Fall time ton tstg IC = 7A, IB1 = 70mA, IB2 = –70mA, ...