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BAS21

JCET

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/S SWITCHING DIODE FEATUR...


JCET

BAS21

File Download Download BAS21 Datasheet


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/S SWITCHING DIODE FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance BAS21 BAS21A BAS21C BAS21S SOT-23 MARKING: JS JS MARKING:JS2 MARKING:JS3 JS2 JS3 MARKING:JS4 JS4 JS JS2 JS3 JS4 Solid dot = Green molding compound device, if none, the normal device Maximum Ratings @Ta=25℃ Parameter Repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current Average rectified output current Non-Repetitive Peak Forward Surge Current @t=8.3ms Repetitive peak forward surge current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature range Symbol VRRM VRWM VR IFM IO IFSM IFRM PD RθJA TJ TSTG Limit 250 400 200 2.5 625 225 555 150 -55~+150 Unit V mA mA A mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time Symbol Test conditions Min Max Unit V(BR) IR= 100µA 250 V IR VR=200V 0.1 µA VF IF=100mA IF=200mA CD VR=0V, f=1MHz 1000 1250 5 mV pF trr IF=IR=30mA,Irr=0.1×IR,RL=100Ω 50 ns www.cj-elec.com 1 D,Nov,2015 Typical Characteristics Forward Characteristics 1000 oC =100 oC T a =25 T a FORWARD CURRENT IF (mA) 100 10 1 0.1...




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