SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
DAP202 SWITCHING DIODE
FEATURES ...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
DAP202 SWITCHING DIODE
FEATURES High Speed High Reliability Suitable for High Packing Density Layout APPLICATIONS High Speed Switching
MARKING: P
SOT-23
PP
Solid dot = Green molding compound device,if none,the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Continuous Forward Current
IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current@t= 8 . 3 m s
PD Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value 80 100 300 2 200 625 150
-55~+150
Unit V mA mA A
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current Forward voltage Total capacitance Reverse recovery time
Symbol V(BR) IR VF Ctot trr
Test conditions IR=100μA VR=70V IF=100mA VR=6V,f=1MHz IF= IR=5mA, VR=6V
Min Typ Max 80
0.1 1.2 3.5 4
Unit V μA V pF ns
www.cj-elec.com
1
B,Oct,2014
FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃
REVERSE CURRENT I (nA) R
Typical Characteristics
Forward Characteristics
100
30 10
3 1
0.3
0.1 0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE V (V) F
1.2
1000
300 100
30 10
3 1
0
Reverse Characteristics
Ta=100℃
Ta=25℃
20 40 60
REVERSE VOLTAGE V (V) R
80
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPATION P (mW) D
Capacitance Characteristics
1.4
Ta=25℃ f=1MHz
1.3
1.2
1.1
1.0 ...
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