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DAP202

JCET

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes DAP202 SWITCHING DIODE FEATURES  ...


JCET

DAP202

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes DAP202 SWITCHING DIODE FEATURES  High Speed  High Reliability  Suitable for High Packing Density Layout APPLICATIONS  High Speed Switching MARKING: P SOT-23 PP Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VR DC Blocking Voltage IO Continuous Forward Current IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current@t= 8 . 3 m s PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value 80 100 300 2 200 625 150 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Reverse recovery time Symbol V(BR) IR VF Ctot trr Test conditions IR=100μA VR=70V IF=100mA VR=6V,f=1MHz IF= IR=5mA, VR=6V Min Typ Max 80 0.1 1.2 3.5 4 Unit V μA V pF ns www.cj-elec.com 1 B,Oct,2014 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (nA) R Typical Characteristics Forward Characteristics 100 30 10 3 1 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F 1.2 1000 300 100 30 10 3 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE V (V) R 80 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 1.4 Ta=25℃ f=1MHz 1.3 1.2 1.1 1.0 ...




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