isc N-Channel MOSFET Transistor
2SK1629
ESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current , high speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VALUE
UNI T
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