isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Mini...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
applications such as switching
regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
3
A
Ptot
Total Dissipation@TC=25℃
50
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK1612
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK1612
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=25V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2A;RL=100Ω
MIN TYP MAX UNIT
900
V
1.0
5.0
V
3.8
5.0
Ω
±1
uA
100
uA
40
ns
140
ns
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC ...