Document
BAS40W SERIES SCHOTTKY DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃) Collector current
IF: 200 mA Collector-base voltage
VR: 40 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. 30¡ À0. 03
SOT-323
1. 25¡ À0. 05 2. 30¡ À0. 05
Unit: mm
0. 30 2. 00¡ À0. 05
1. 01 REF
BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time
Symbol V(BR) R
IR VF CD trr
Test conditions
IR= 10µA
VR=30V IF=1mA IF=40mA VR=0V, f=1MHz IF=10mA through IR=10mA to IR=1mA
MIN MAX
40
200 380 1000
5
5
UNIT V
nA
mV
pF
nS
.