isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650 (Min) ·Mini...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650 (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
650
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.125 ℃/W
Rth j-a
Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK1553
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS=0; ID=10mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=650V; VGS= 0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=5A;RL=25Ω
toff
Turn-off time
2SK1553
MIN TYP MAX UNIT
650
V
2.1
3.0
4.0
V
2.0
2.5
Ω
±100 nA
500
uA
30
45
ns
55
85
ns
45
70
ns
185 280
ns
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