FM25V02A

FM25V02A 256-Kbit (32K × 8) Serial (SPI) F-RAM 256-Kbit (32K × 8) Serial (SPI) F-RAM Features ■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 14) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Very fast serial peripheral interface (SPI) ❐ Up to 40-MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write-protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array ■ Device ID ❐ Manufacturer ID and Product ID ■ Low power consumption ❐ 2.5-mA active current at 40 MHz ❐ 150-A standby current ❐ 8-A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C ■ Packages ❐ 8-pin small outline integrated circuit (SOIC) package ❐ 8-pin dual flat no-leads (DFN) package ■ Restriction of hazardous substances (RoHS) compliant Functional Description The FM25V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flas...