DIM500GDM33-TL000

Replaces DS6113-1 DIM500GDM33-TL000 Dual Switch IGBT Module DS6113-2 January 2014 (LN31251) FEATURES  Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base with AlN Substrates APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM500GDM33-TL000 is a Low VCE(sat) single switch 3300V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 3300V 2.0V 500A 1000A * Measured at the auxiliary terminals 7(E1) 1(E1) 6(G1) 2(C) 10(C2) 9(G2) 5(C1) 3(C1) 4(E2) 8(E2) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM500GDM33-TL000 Note: When ordering, please use the complete part number Outline type code: G (See Fig. 11 for further information) Fig. 2 Package Caut...