Document
Data
Replaces DS6169-1
Preliminary Information
DIM1200ASM45-TL001
Single Switch IGBT Module
DS6169-2 August 2015 (LN32854)
FEATURES 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
4500V 2.3V 1200A 2400A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.
The DIM1200ASM45-TL001 is a single switch 4500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
3(C) 2(G)
9(C) 7(C)
5(C)
1(E) 8(E) 6(E) 4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1200ASM45-TL001
Note: When ordering, please use the complete part number
Outline type code: A
(See Fig. 11 for further information) Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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DIM1200ASM45-TL001
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES VGES
IC IC(PK) Pmax
I2t
Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value
Visol Isolation voltage – per module QPD Partial discharge – per module
VGE = 0V
Test Conditions
Tcase = 95°C
1ms, Tcase = 115°C
Tcase = 25°C, Tj = 125°C
VR = 0, tp = 10ms, Tj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
Max. Units
4500 V
±20 V
1200 A
2400 A
12.5 460
kW kA2s
10.2 KV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Rth(j-c) Thermal resistance – transistor
Rth(j-c) Rth(c-h)
Thermal resistance – diode
Thermal resistance – case to heatsink (per module)
Tj Junction temperature
Tstg Storage temperature.