DatasheetsPDF.com

DIM1200ASM45-TL001 Dataheets PDF



Part Number DIM1200ASM45-TL001
Manufacturers Dynex
Logo Dynex
Description Single Switch IGBT Module
Datasheet DIM1200ASM45-TL001 DatasheetDIM1200ASM45-TL001 Datasheet (PDF)

Data Replaces DS6169-1 Preliminary Information DIM1200ASM45-TL001 Single Switch IGBT Module DS6169-2 August 2015 (LN32854) FEATURES  10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base With AlN Substrates KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 4500V 2.3V 1200A 2400A * Measured at the auxiliary terminals APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction D.

  DIM1200ASM45-TL001   DIM1200ASM45-TL001



Document
Data Replaces DS6169-1 Preliminary Information DIM1200ASM45-TL001 Single Switch IGBT Module DS6169-2 August 2015 (LN32854) FEATURES  10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base With AlN Substrates KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 4500V 2.3V 1200A 2400A * Measured at the auxiliary terminals APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM1200ASM45-TL001 is a single switch 4500V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 3(C) 2(G) 9(C) 7(C) 5(C) 1(E) 8(E) 6(E) 4(E) Fig. 1 Circuit configuration ORDERING INFORMATION Order As: DIM1200ASM45-TL001 Note: When ordering, please use the complete part number Outline type code: A (See Fig. 11 for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 1/8 DIM1200ASM45-TL001 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VCES VGES IC IC(PK) Pmax I2t Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Visol Isolation voltage – per module QPD Partial discharge – per module VGE = 0V Test Conditions Tcase = 95°C 1ms, Tcase = 115°C Tcase = 25°C, Tj = 125°C VR = 0, tp = 10ms, Tj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS Max. Units 4500 V ±20 V 1200 A 2400 A 12.5 460 kW kA2s 10.2 KV 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): >600 Symbol Parameter Rth(j-c) Thermal resistance – transistor Rth(j-c) Rth(c-h) Thermal resistance – diode Thermal resistance – case to heatsink (per module) Tj Junction temperature Tstg Storage temperature.


CYBLE-224110-00 DIM1200ASM45-TL001 DIM1200ASM45-TL000


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)