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BAS16TW

JCET

SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAS16TW/MMBD4148TW SWITCHING DIOD...


JCET

BAS16TW

File Download Download BAS16TW Datasheet


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAS16TW/MMBD4148TW SWITCHING DIODE SOT-363 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: 654 MMBD4148TW:KA2 BAS16TW:KA2 --- KA2 KA2 +++ --- Solid dot = Pin1 indicate. 123 KA2 KA2 Solid dot = Green molding compound device, +++ if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RθJA Tj TSTG 100 75 53 300 150 2.0 200 625 150 -55~+150 V V V mA mA A mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol Min Typ Max Unit V (BR) 75 V VF1 0.715 V VF2 0.855 V VF3 1.0 V VF4 1.25 V IR1 1 μA IR2 25 nA CT 2 pF trr 4 ns Conditions IR=10μA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 C,Mar,2016 JUNCTION CAPACITANCE C (pF) J POWER DISSIPATION P (mW) D FORWARD CURRENT I (mA) F T a =1...




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