IXFH20N50P3

Preliminary Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 TO-263 AA (IXFA) VDSS = ID25 = RDS(on)  500V 20A 300m TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight G S D (Tab) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 500  30  40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 20 40 10 300 35 380 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force Mounting Torque 10..65/2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V           100 nA 25 A 1.25 mA 300 m GD S TO-3P (IXFQ) D (Tab) G D S TO-247 (IXFH) D (Tab) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  Fast Intrinsic Rectifier  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  S...