SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Volt...
Description
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR 80
Continuous Forward Current
IF 150
Surge Current (10ms)
IFSM
2
Power Dissipation
PD 200 *
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V V mA A mW
A G H
BAV70T
SILICON EPITAXIAL PLANAR DIODE
C
E B
2 13
DIM MILLIMETERS A 1.60+_ 0.10
D B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
J
1. ANODE 1 2. ANODE 2 3. CATHODE
3 21
ESM
Marking
H2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current Total Capacitance
VF(1) VF(2) VF(3)
IR CT
Reverse Recovery Time
trr
TEST CONDITION IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA
MIN. -
TYP. 0.60 0.72
-
MAX. -
1.25 0.5 3.0 4.0
UNIT
V
A pF nS
2009. 1. 23
Revision No : 1
1/2
FORWARD CURRENT I F (mA)
BAV70T
10 3
10 2 10
1 10 -1 10 -2
0
IF - VF
C C
TaTa=-=2255
Ta=100 C
0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V)
1.2
REVERSE CURRENT IR (µA)
IR - VR
10
1 Ta=100 C Ta=75 C
10-1 Ta=50 C
10-2 Ta=25 C
10-3 0
20 40 60 REVERSE VOLTAGE VR (V)
80
C T - VR
2.0 f=1MHz Ta=25 C
1.6
1.2
0...
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