Switching Diode
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
BAW56T/BAV70T/BAV99T SWITCHING DIO...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
BAW56T/BAV70T/BAV99T SWITCHING DIODE
FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
BAW56T
BAV70 T
BAV99T
SOT-523
MARKING:JD JD
MARKING:JJ JJ
MARKING:JE
JE
JD JJ
JE
Solid dot = Green molding compound device, if none, the normal device
Maximum Ratings @Ta=25℃
Parameter Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range
Symbol VR IF IFSM PD RθJA TJ TSTG
Limit 85 75 2.0 150 833 150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V(BR)
IR= 1μA
Reverse voltage leakage current
IR1 VR=75V IR2 VR=25V
Forward voltage
Diode capacitance Reverse recovery time
IF=1mA
VF
IF=10mA IF=50mA
IF=150mA
CD VR=0 f=1MHz
t rr
IF=IR=10mA Irr=0.1×IR,RL=100Ω
Min 85
Max
2
0.03 715 855 1000 1250 1.5
4
Unit V mA A
mW ℃/W
℃ ℃
Unit V μA μA
mV
pF ns
www.cj-elec.com
1
B,Oct,2014
FORWARD CURRENT I (mA) F
Typical Characteristics
Forward Characteristics
300
100
=100℃
30 10
T a
=25℃
T a
3 1
0.3
0.1 0.0
0.4 0.8 1.2
FORWARD VOLTAGE V (V) F
1.6
REVERSE CURRENT I (nA) R
10000
3000 1000
300 100
30 10
3 1
0
Reverse Characteristics
T =100℃ a
T =25℃ a
20 40 60 80
REVERSE VOLTAGE V (V) R
100
Capacitance Characteristics
1....
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