2SK1526

isc N-Channel MOSFET Transistor 2SK1526 ESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 40 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 50 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1526 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 450 V VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA 2.0 3.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=20A 0.11 0.15 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±10 uA IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 250 uA VSD Diode Forward Voltage IF=40A; VGS=0 1.2 V tr Rise time 175 ns ton Turn-on time tf Fall time 235 ns VGS=10V;ID=...